High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric

Chuan Yu Han; Wing Man Tang; Cheung Hoi Leung; Chi Ming Che; Peter T. Lai

doi:10.1109/LED.2013.2281661

High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric

Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che, Peter T. Lai

Research output: Journal article publication › Journal article › Academic research › peer-review

12 Citations (Scopus)

Abstract

Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.

Original language	English
Article number	6615967
Pages (from-to)	1397-1399
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/LED.2013.2281661
Publication status	Published - 13 Nov 2013

Keywords

Fluorination
HfLaON
high-κ dielectric
organic thin-film transistor (OTFT)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

More information

10.1109/LED.2013.2281661

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@article{d21b671a3a004b83bc9eb11ae45b923d,

title = "High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric",

abstract = "Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.",

keywords = "Fluorination, HfLaON, high-κ dielectric, organic thin-film transistor (OTFT)",

author = "Han, {Chuan Yu} and Tang, {Wing Man} and Leung, {Cheung Hoi} and Che, {Chi Ming} and Lai, {Peter T.}",

year = "2013",

month = nov,

day = "13",

doi = "10.1109/LED.2013.2281661",

language = "English",

volume = "34",

pages = "1397--1399",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

number = "11",

}

TY - JOUR

T1 - High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric

AU - Han, Chuan Yu

AU - Tang, Wing Man

AU - Leung, Cheung Hoi

AU - Che, Chi Ming

AU - Lai, Peter T.

PY - 2013/11/13

Y1 - 2013/11/13

N2 - Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.

AB - Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.

KW - Fluorination

KW - HfLaON

KW - high-κ dielectric

KW - organic thin-film transistor (OTFT)

UR - http://www.scopus.com/inward/record.url?scp=84887236747&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2281661

DO - 10.1109/LED.2013.2281661

M3 - Journal article

SN - 0741-3106

VL - 34

SP - 1397

EP - 1399

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6615967

ER -

High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric

Abstract

Keywords

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