Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.
- high-κ dielectric
- organic thin-film transistor (OTFT)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials