High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric

Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che, Peter T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)


Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.
Original languageEnglish
Article number6615967
Pages (from-to)1397-1399
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 13 Nov 2013


  • Fluorination
  • HfLaON
  • high-κ dielectric
  • organic thin-film transistor (OTFT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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