@article{721d5a78d4fd4f5b9dc182c147f125b5,
title = "High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb",
abstract = "Pentacene organic thin-film transistors (OTFTs) using high-k NdxNb(1−x)O gate dielectric with different Nb contents (x = 1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x = 0.950, achieving a high carrier mobility of 1.95 cm2 V−1 s−1, small threshold voltage of −1.57 V, small sub-threshold swing of 0.13 V dec−1, and small hysteresis of 0.13 V. Atomic force microscopy and X-ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor-like traps associated with the hydroxide formed in Nd2O3 after absorbing moisture and also acceptor-like traps (in the form of oxygen vacancies) induced by Nb incorporation.",
keywords = "high-k, NdNbO, pentacene organic thin-film transistors",
author = "Yuanxiao Ma and Tang, {Wing Man} and Chuanyu Han and Lai, {Pui To}",
year = "2018",
month = mar,
day = "7",
doi = "10.1002/pssa.201700609",
language = "English",
volume = "215",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "5",
}