High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

Yuanxiao Ma, Wing Man Tang, Chuanyu Han, Pui To Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

Pentacene organic thin-film transistors (OTFTs) using high-k NdxNb(1−x)O gate dielectric with different Nb contents (x = 1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x = 0.950, achieving a high carrier mobility of 1.95 cm2 V−1 s−1, small threshold voltage of −1.57 V, small sub-threshold swing of 0.13 V dec−1, and small hysteresis of 0.13 V. Atomic force microscopy and X-ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor-like traps associated with the hydroxide formed in Nd2O3 after absorbing moisture and also acceptor-like traps (in the form of oxygen vacancies) induced by Nb incorporation.

Original languageEnglish
Article number1700609
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume215
Issue number5
DOIs
Publication statusPublished - 7 Mar 2018

Keywords

  • high-k
  • NdNbO
  • pentacene organic thin-film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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