TY - JOUR
T1 - High-Performance Multi-Resonance Thermally Activated Delayed Fluorescence Emitters for Narrowband Organic Light-Emitting Diodes
AU - Jiang, He
AU - Jin, Jibiao
AU - Wong, Wai Yeung
N1 - Funding Information:
This work was supported by the National Key R&D Program of China (2022YFE0104100), the National Natural Science Foundation of China (22205188), the ITC Guangdong‐Hong Kong Technology Cooperation Funding Scheme (TCFS) (GHP/038/19GD), the CAS‐Croucher Funding Scheme for Joint Laboratories (ZH4A), the Hong Kong Research Grants Council (PolyU 15301922), the Hong Kong Polytechnic University (YXB8), Miss Clarea Au for the Endowed Professorship in Energy (847S), and the Research Institute for Smart Energy (CDAQ).
Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/12/8
Y1 - 2023/12/8
N2 - Multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters have drawn considerable attention because of their remarkable optoelectronic properties of high emission efficiency and narrow emission profile, and represent an active subject of cutting-edge research in the organic electroluminescence (EL). However, the slow reverse intersystem crossing (RISC) rate of MR-TADF emitter caused by the large energy gap (ΔEST) and small spin-orbit coupling (SOC) matrix elements between the singlet and triplet excited states limits their further development in organic EL devices. Currently, innovative molecular design strategies have been developed including heavy atom integration, π-extended MR framework and metal perturbation, and so on to improve the RISC process of MR-TADF emitters for high-performance EL devices. Here, an overview is presented on the recent progress of MR-TADF emitters with fast RISC rate (> 10−5 s−1), with particular attention to the molecular design, optoelectronic properties, and device performance of organic light-emitting diodes (OLEDs), which intends to systematize the knowledge in this subject for the thriving development of highly efficient MR-TADF emitters. Finally, the challenges and future prospects of MR-TADF materials are discussed comprehensively.
AB - Multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters have drawn considerable attention because of their remarkable optoelectronic properties of high emission efficiency and narrow emission profile, and represent an active subject of cutting-edge research in the organic electroluminescence (EL). However, the slow reverse intersystem crossing (RISC) rate of MR-TADF emitter caused by the large energy gap (ΔEST) and small spin-orbit coupling (SOC) matrix elements between the singlet and triplet excited states limits their further development in organic EL devices. Currently, innovative molecular design strategies have been developed including heavy atom integration, π-extended MR framework and metal perturbation, and so on to improve the RISC process of MR-TADF emitters for high-performance EL devices. Here, an overview is presented on the recent progress of MR-TADF emitters with fast RISC rate (> 10−5 s−1), with particular attention to the molecular design, optoelectronic properties, and device performance of organic light-emitting diodes (OLEDs), which intends to systematize the knowledge in this subject for the thriving development of highly efficient MR-TADF emitters. Finally, the challenges and future prospects of MR-TADF materials are discussed comprehensively.
KW - multi-resonance
KW - narrowband emission
KW - organic light-emitting diodes
KW - reverse intersystem crossing rate
KW - thermally activated delayed fluorescence
UR - http://www.scopus.com/inward/record.url?scp=85166983672&partnerID=8YFLogxK
U2 - 10.1002/adfm.202306880
DO - 10.1002/adfm.202306880
M3 - Review article
AN - SCOPUS:85166983672
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 50
M1 - 2306880
ER -