Abstract
High-Performance microwave passive components are demonstrated on standard silicon substrate incorporating a low-k Benzocyclobutene (BCB) layer. Metal ohmic loss and substrate coupling loss, the two major factors that degrade the on-chip passive components are suppressed by the employment of electroplated copper and the low-k BCB layer, respectively. Spiral inductors exhibit Q-factor as high as 25 at 2 GHz. A low-loss, low-pass microstrip transmission line based microwave filter has been fabricated. The filter has a cut-off frequency at 10 GHz with an insertion loss of -1.1 dB. The fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high performance RFIC's and MMIC's.
Original language | English |
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Title of host publication | ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology |
Publisher | IEEE |
Pages | 263-266 |
Number of pages | 4 |
ISBN (Electronic) | 078037486X, 9780780374867 |
DOIs | |
Publication status | Published - 1 Jan 2002 |
Externally published | Yes |
Event | 3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002 - Beijing, China Duration: 17 Aug 2002 → 19 Aug 2002 |
Conference
Conference | 3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002 |
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Country/Territory | China |
City | Beijing |
Period | 17/08/02 → 19/08/02 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Instrumentation