High-performance microwave passive components on silicon substrate

K. J. Chen, Xiao Huo, L. L.W. Leung, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

High-Performance microwave passive components are demonstrated on standard silicon substrate incorporating a low-k Benzocyclobutene (BCB) layer. Metal ohmic loss and substrate coupling loss, the two major factors that degrade the on-chip passive components are suppressed by the employment of electroplated copper and the low-k BCB layer, respectively. Spiral inductors exhibit Q-factor as high as 25 at 2 GHz. A low-loss, low-pass microstrip transmission line based microwave filter has been fabricated. The filter has a cut-off frequency at 10 GHz with an insertion loss of -1.1 dB. The fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high performance RFIC's and MMIC's.
Original languageEnglish
Title of host publicationICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology
PublisherIEEE
Pages263-266
Number of pages4
ISBN (Electronic)078037486X, 9780780374867
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002 - Beijing, China
Duration: 17 Aug 200219 Aug 2002

Conference

Conference3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002
CountryChina
CityBeijing
Period17/08/0219/08/02

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

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