In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded Inx Al0.4 Ga 1-x-0.4 As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3× 10-6 A/ cm2 at 0 V and 4.2× 10-5 A/ cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)