High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

S. Q. Liu, Q. Han, B. Zhu, X. H. Yang, H. Q. Ni, J. F. He, X. Wang, M. F. Li, Y. Zhu, J. Wang, X. P. Wang, Z. C. Niu

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5 Citations (Scopus)

Abstract

In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded Inx Al0.4 Ga 1-x-0.4 As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3× 10-6 A/ cm2 at 0 V and 4.2× 10-5 A/ cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.

Original languageEnglish
Article number201104
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - 17 May 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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