High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

S. Q. Liu; Q. Han; B. Zhu; X. H. Yang; H. Q. Ni; J. F. He; X. Wang; M. F. Li; Y. Zhu; J. Wang; X. P. Wang; Z. C. Niu

doi:10.1063/1.3592569

High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

S. Q. Liu, Q. Han, B. Zhu, X. H. Yang, H. Q. Ni, J. F. He, X. Wang, M. F. Li, Y. Zhu, J. Wang, X. P. Wang, Z. C. Niu

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded In_x Al_0.4 Ga _1-x-0.4 As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3× 10^-6 A/ cm² at 0 V and 4.2× 10^-5 A/ cm² at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.

Original language	English
Article number	201104
Journal	Applied Physics Letters
Volume	98
Issue number	20
DOIs	https://doi.org/10.1063/1.3592569
Publication status	Published - 17 May 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.3592569

Cite this

@article{d5cf26065edd4479955749eee4d7532c,

title = "High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate",

abstract = "In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded Inx Al0.4 Ga 1-x-0.4 As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3× 10-6 A/ cm2 at 0 V and 4.2× 10-5 A/ cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.",

author = "Liu, {S. Q.} and Q. Han and B. Zhu and Yang, {X. H.} and Ni, {H. Q.} and He, {J. F.} and X. Wang and Li, {M. F.} and Y. Zhu and J. Wang and Wang, {X. P.} and Niu, {Z. C.}",

note = "Funding Information: This work was supported by the National Natural Foundation of China under Grant No. 60876039, the Hi-Tech Research and Development Program of China (863 Program) under Grant Nos. 2007AA03Z421 and 2009AA03Z404, and the National Basic Research Program of China (973 Program) under Grant No. 2006CB302802. ",

year = "2011",

month = may,

day = "17",

doi = "10.1063/1.3592569",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

AU - Liu, S. Q.

AU - Han, Q.

AU - Zhu, B.

AU - Yang, X. H.

AU - Ni, H. Q.

AU - He, J. F.

AU - Wang, X.

AU - Li, M. F.

AU - Zhu, Y.

AU - Wang, J.

AU - Wang, X. P.

AU - Niu, Z. C.

N1 - Funding Information: This work was supported by the National Natural Foundation of China under Grant No. 60876039, the Hi-Tech Research and Development Program of China (863 Program) under Grant Nos. 2007AA03Z421 and 2009AA03Z404, and the National Basic Research Program of China (973 Program) under Grant No. 2006CB302802.

PY - 2011/5/17

Y1 - 2011/5/17

N2 - In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded Inx Al0.4 Ga 1-x-0.4 As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3× 10-6 A/ cm2 at 0 V and 4.2× 10-5 A/ cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.

AB - In this letter, we demonstrated a top illuminated 1.55 μm metamorphic InGaAs resonant-cavity-enhanced p-i-n photodetector grown on GaAs substrate. The photodetectors were grown by a solid-source molecular beam epitaxy system. The high quality linearly graded Inx Al0.4 Ga 1-x-0.4 As metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3× 10-6 A/ cm2 at 0 V and 4.2× 10-5 A/ cm2 at a reverse bias of 5 V. A high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 dB bandwidth up to 13 GHz were also obtained.

UR - http://www.scopus.com/inward/record.url?scp=79957557764&partnerID=8YFLogxK

U2 - 10.1063/1.3592569

DO - 10.1063/1.3592569

M3 - Journal article

AN - SCOPUS:79957557764

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201104

ER -

High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this