High-performance logic and memory devices based on a dual-gated MoS₂ architecture

Keyphrases

• High Performance 100%
• Dynamic Random Access Memory 100%
• Memory Device 100%
• Gate Structure 100%
• Device-independent 100%
• Molybdenite 100%
• Logic Devices 100%
• MoS2 Field Effect Transistors 100%
• Extra Degree of Freedom 50%
• Current Ratio 50%
• Retention Time 50%
• Threshold Voltage 50%
• Field-effect Transistors 50%
• Switching Performance 50%
• Off-state Current 50%
• Continuous Film 50%
• Si MOSFET 50%
• Memory Unit 50%
• Wafer-scale 50%
• Long Retention Time 50%
• Electrostatic Control 50%
• Subthreshold Swing 50%
• Low-power Electronics 50%
• Multilayer MoS2 50%
• Large-current-density 50%
• Back-gate Voltage 50%
• Top Gate 50%
• Logic Inverter 50%
• On-state Current 50%
• Steep Subthreshold Swing 50%
• Digital Power 50%

Material Science

• Field Effect Transistors 100%
• Monolayers 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Chemical Vapor Deposition 33%
• Film 33%
• Density 33%