High-Performance Inverted Tandem OLEDs with the Charge Generation Layer based on MoOx and Ag Doped Planar Heterojunction

Yachen Xu, Yixiao Niu, Chunliu Gong, Wei Shi, Xuyong Yang, Bin Wei, Wai Yeung Wong (Corresponding Author)

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)


The morphological and electrical characteristics of a planar-heterojunction structured charge generation layer (CGL) consisting of MoO3 doped N,N′-bis-(1-naphthalenyl)-N, N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as the p-type material and Ag-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) as the n-type counterpart (NPB:MoO3/Bphen:Ag). A significant charge generation effect of CGL is observed and its mechanism is analyzed. The introduction of CGL can enhance the concentration of the charge carrier and balance the injection of carriers. Inverted tandem organic light-emitting diodes (OLEDs) with the CGL are fabricated. The inverted tandem OLEDs exhibit excellent optoelectronic performance due to the charge generation effect and the suppression of the high concentration quenching. The maximum current efficiency and external quantum efficiency of the inverted tandem OLED reached 27.91 cd A−1 and 11.18%, respectively, which are 110.95% and 95.79% higher than that of the inverted OLED.

Original languageEnglish
Article number2200984
JournalAdvanced Optical Materials
Issue number16
Early online date8 Jul 2022
Publication statusPublished - 18 Aug 2022


  • balanced charge carriers
  • charge generation layer
  • electrochemical impedance
  • inverted tandem organic light-emitting diode
  • planar heterojunction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'High-Performance Inverted Tandem OLEDs with the Charge Generation Layer based on MoOx and Ag Doped Planar Heterojunction'. Together they form a unique fingerprint.

Cite this