TY - JOUR
T1 - High-Performance Inverted Tandem OLEDs with the Charge Generation Layer based on MoOx and Ag Doped Planar Heterojunction
AU - Xu, Yachen
AU - Niu, Yixiao
AU - Gong, Chunliu
AU - Shi, Wei
AU - Yang, Xuyong
AU - Wei, Bin
AU - Wong, Wai Yeung
N1 - Funding Information:
Y.X. and Y.N. contributed equally to this work. This work was financially supported by National Natural Science Foundation of China (11974236). W.-Y.W. would also like to thank the CAS-Croucher Funding Scheme for Joint Laboratories (ZH4A), the ITC Guangdong-Hong Kong Technology Cooperation Funding Scheme (TCFS) (GHP/038/19GD), the Hong Kong Research Grants Council (PolyU 15305320), Hong Kong Polytechnic University (1-ZE1C), Research Institute for Smart Energy (RISE), and the Endowed Professorship in Energy from Miss Clarea Au (847S) for the financial support.
Funding Information:
Y.X. and Y.N. contributed equally to this work. This work was financially supported by National Natural Science Foundation of China (11974236). W.‐Y.W. would also like to thank the CAS‐Croucher Funding Scheme for Joint Laboratories (ZH4A), the ITC Guangdong‐Hong Kong Technology Cooperation Funding Scheme (TCFS) (GHP/038/19GD), the Hong Kong Research Grants Council (PolyU 15305320), Hong Kong Polytechnic University (1‐ZE1C), Research Institute for Smart Energy (RISE), and the Endowed Professorship in Energy from Miss Clarea Au (847S) for the financial support.
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/8/18
Y1 - 2022/8/18
N2 - The morphological and electrical characteristics of a planar-heterojunction structured charge generation layer (CGL) consisting of MoO3 doped N,N′-bis-(1-naphthalenyl)-N, N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as the p-type material and Ag-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) as the n-type counterpart (NPB:MoO3/Bphen:Ag). A significant charge generation effect of CGL is observed and its mechanism is analyzed. The introduction of CGL can enhance the concentration of the charge carrier and balance the injection of carriers. Inverted tandem organic light-emitting diodes (OLEDs) with the CGL are fabricated. The inverted tandem OLEDs exhibit excellent optoelectronic performance due to the charge generation effect and the suppression of the high concentration quenching. The maximum current efficiency and external quantum efficiency of the inverted tandem OLED reached 27.91 cd A−1 and 11.18%, respectively, which are 110.95% and 95.79% higher than that of the inverted OLED.
AB - The morphological and electrical characteristics of a planar-heterojunction structured charge generation layer (CGL) consisting of MoO3 doped N,N′-bis-(1-naphthalenyl)-N, N′-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as the p-type material and Ag-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) as the n-type counterpart (NPB:MoO3/Bphen:Ag). A significant charge generation effect of CGL is observed and its mechanism is analyzed. The introduction of CGL can enhance the concentration of the charge carrier and balance the injection of carriers. Inverted tandem organic light-emitting diodes (OLEDs) with the CGL are fabricated. The inverted tandem OLEDs exhibit excellent optoelectronic performance due to the charge generation effect and the suppression of the high concentration quenching. The maximum current efficiency and external quantum efficiency of the inverted tandem OLED reached 27.91 cd A−1 and 11.18%, respectively, which are 110.95% and 95.79% higher than that of the inverted OLED.
KW - balanced charge carriers
KW - charge generation layer
KW - electrochemical impedance
KW - inverted tandem organic light-emitting diode
KW - planar heterojunction
UR - http://www.scopus.com/inward/record.url?scp=85133609459&partnerID=8YFLogxK
U2 - 10.1002/adom.202200984
DO - 10.1002/adom.202200984
M3 - Journal article
AN - SCOPUS:85133609459
SN - 2195-1071
VL - 10
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 16
M1 - 2200984
ER -