High performance gate-all-around devices using Metal Induced Lateral Crystallization

Victor W C Chan; Philip Ching Ho Chan

High performance gate-all-around devices using Metal Induced Lateral Crystallization

Victor W C Chan, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

5 Citations (Scopus)

Abstract

High performance gate-all-around (GAT) devices were fabricated using metal induced lateral crystallization (MILC). The fabrication formed large silicon grain in the active area to recrystallize the amorphous silicon. GAT had lower subthreshold, lower threshold voltage and larger drive current compared to single-gate thin film transistor (SPC) devices. This technology was suitable for high performance, low voltage and memory applications.

Original language	English
Title of host publication	IEEE International SOI Conference
Publisher	IEEE
Pages	112-113
Number of pages	2
Publication status	Published - 1 Dec 2000
Externally published	Yes
Event	2000 IEEE International SOI Conference Proceedings - Wakefield, MA, United States Duration: 1 Dec 2000 → …

Conference

Conference	2000 IEEE International SOI Conference Proceedings
Country/Territory	United States
City	Wakefield, MA
Period	1/12/00 → …

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "High performance gate-all-around devices using Metal Induced Lateral Crystallization",

abstract = "High performance gate-all-around (GAT) devices were fabricated using metal induced lateral crystallization (MILC). The fabrication formed large silicon grain in the active area to recrystallize the amorphous silicon. GAT had lower subthreshold, lower threshold voltage and larger drive current compared to single-gate thin film transistor (SPC) devices. This technology was suitable for high performance, low voltage and memory applications.",

author = "Chan, {Victor W C} and Chan, {Philip Ching Ho}",

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AU - Chan, Philip Ching Ho

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N2 - High performance gate-all-around (GAT) devices were fabricated using metal induced lateral crystallization (MILC). The fabrication formed large silicon grain in the active area to recrystallize the amorphous silicon. GAT had lower subthreshold, lower threshold voltage and larger drive current compared to single-gate thin film transistor (SPC) devices. This technology was suitable for high performance, low voltage and memory applications.

AB - High performance gate-all-around (GAT) devices were fabricated using metal induced lateral crystallization (MILC). The fabrication formed large silicon grain in the active area to recrystallize the amorphous silicon. GAT had lower subthreshold, lower threshold voltage and larger drive current compared to single-gate thin film transistor (SPC) devices. This technology was suitable for high performance, low voltage and memory applications.

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M3 - Conference article published in proceeding or book

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ER -

High performance gate-all-around devices using Metal Induced Lateral Crystallization

Abstract

Conference

ASJC Scopus subject areas

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