High performance gate-all-around devices using Metal Induced Lateral Crystallization

Victor W C Chan, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

5 Citations (Scopus)


High performance gate-all-around (GAT) devices were fabricated using metal induced lateral crystallization (MILC). The fabrication formed large silicon grain in the active area to recrystallize the amorphous silicon. GAT had lower subthreshold, lower threshold voltage and larger drive current compared to single-gate thin film transistor (SPC) devices. This technology was suitable for high performance, low voltage and memory applications.
Original languageEnglish
Title of host publicationIEEE International SOI Conference
Number of pages2
Publication statusPublished - 1 Dec 2000
Externally publishedYes
Event2000 IEEE International SOI Conference Proceedings - Wakefield, MA, United States
Duration: 1 Dec 2000 → …


Conference2000 IEEE International SOI Conference Proceedings
Country/TerritoryUnited States
CityWakefield, MA
Period1/12/00 → …

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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