High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Kar Seng Teng, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

57 Citations (Scopus)


Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2 ¯ 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW−1 under a 245-nm illumination (27 μWcm−2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W−1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.

Original languageEnglish
Article number47
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 1 Feb 2020


  • Heterojunction
  • NiO
  • UV photodetector
  • β-GaO

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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