High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma

Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che, Pui To Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)


KGaA, Weinheim. Pentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3(0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3gate dielectric with different plasma treatment times.
Original languageEnglish
Pages (from-to)866-870
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Issue number10
Publication statusPublished - 1 Oct 2014


  • Low-frequency noise
  • Organic semiconductors
  • Passivation
  • Plasma treatment
  • TaLaO
  • Thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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