Abstract
KGaA, Weinheim. Pentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3(0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3gate dielectric with different plasma treatment times.
Original language | English |
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Pages (from-to) | 866-870 |
Number of pages | 5 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 8 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Oct 2014 |
Keywords
- Low-frequency noise
- Organic semiconductors
- Passivation
- Plasma treatment
- TaLaO
- Thin-film transistors
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics