High-Mobility Pentacene Organic Thin-Film Transistor with LaxNb(1-x)OyGate Dielectric Fabricated on Vacuum Tape

Chuan Yu Han, Wing Man Tang, P. T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)

Abstract

Pentacene organic thin-film transistors (OTFTs) using LaxNb(1-x)Oyas gate dielectric with x= 1, 0.946, 0.850, and 0.648 have been fabricated on vacuum tape at a temperature of 200 °C. Among them, the OTFT with La0.850Nb0.150Oyas gate dielectric has the highest carrier mobility of 4.63 cm2V-1s-1, negligible hysteresis of -0.032 V, small subthreshold swing of 0.174 V/decade, and small threshold voltage of -1.90 V. AFM and X-ray photoelectron spectroscopy reveal that Nb incorporation can alleviate the hygroscopicity of La oxide, resulting in a smoother dielectric surface. Pentacene grain size first increases with Nb content due to smoother dielectric surface, and then decreases due to Nb-induced traps acting as nucleation sites for the growth of pentacene grains on the dielectric surface. Therefore, there exists an optimal Nb content in LaxNb(1-x)Oythat can result in the largest grain size and, hence, the highest carrier mobility.
Original languageEnglish
Article number7859403
Pages (from-to)1716-1722
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number4
DOIs
Publication statusPublished - 1 Apr 2017

Keywords

  • Flexible electronics
  • High-κ dielectric
  • Hysteresis
  • LaNbO
  • Organic thin-film transistor (OTFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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