Abstract
High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.
| Original language | English |
|---|---|
| Pages (from-to) | 691-694 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 1 Dec 2004 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 Dec 2004 → 15 Dec 2004 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry