High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

X. Huo; M. Zhang; Philip Ching Ho Chan; Q. Liang; Z. K. Tang

High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

X. Huo, M. Zhang, Philip Ching Ho Chan, Q. Liang, Z. K. Tang

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.

Original language	English
Pages (from-to)	691-694
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 Dec 2004 → 15 Dec 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{16c13548af09461bb888ff62e1236925,

title = "High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors",

abstract = "High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.",

author = "X. Huo and M. Zhang and Chan, {Philip Ching Ho} and Q. Liang and Tang, {Z. K.}",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "691--694",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "IEEE",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

TY - JOUR

T1 - High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

AU - Huo, X.

AU - Zhang, M.

AU - Chan, Philip Ching Ho

AU - Liang, Q.

AU - Tang, Z. K.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.

AB - High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.

UR - http://www.scopus.com/inward/record.url?scp=21644460518&partnerID=8YFLogxK

M3 - Conference article

SN - 0163-1918

SP - 691

EP - 694

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

Abstract

ASJC Scopus subject areas

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