High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

X. Huo, M. Zhang, Philip Ching Ho Chan, Q. Liang, Z. K. Tang

Research output: Journal article publicationConference articleAcademic researchpeer-review

35 Citations (Scopus)

Abstract

High frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.
Original languageEnglish
Pages (from-to)691-694
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 1 Dec 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this