High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs

Yuda Zhao, Jingsi Qiao, Zhihao Yu, Peng Yu, Kang Xu, Shu Ping Lau, Wu Zhou, Zheng Liu, Xinran Wang, Wei Ji, Yang Chai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

488 Citations (Scopus)


A layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2was demonstrated, which is only dependent on the number of layers, instead of external effects (electrical and optical measurements, in combination with the DFT calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2. Few-layer PtSe2device exhibits semiconducting behavior, and shows high room-temperature electron mobility in a back-gated configuration on SiO2/Si substrate. On the contrary, bulk PtSe2device demonstrates metallic-like behavior and has high conductivity. The widely tunable bandgap of PtSe2enables it to be expanded into near-infrared or even mid-infrared region, and effectively responds to the near-infrared optical stimuli with a high photoresponsivity. In addition, our PtSe2device also exhibits much better air-stability (over one year) than BP.
Original languageEnglish
Article number1604230
JournalAdvanced Materials
Issue number5
Publication statusPublished - 1 Jan 2017


  • 2D layered materials
  • electronic structure
  • mobility
  • PtSe 2
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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