Abstract
We demonstrated a Cu/CNT composite material for interconnect application. The electromigration (EM) properties of Cu/CNT composite via and line were investigated using Kelvin and Blech test structures respectively. Our results showed that the EM lifetime of the Cu/CNT composite is more than 5 times longer than Cu.
| Original language | English |
|---|---|
| Title of host publication | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
| DOIs | |
| Publication status | Published - 1 Dec 2008 |
| Externally published | Yes |
| Event | 2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008 |
Conference
| Conference | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 15/12/08 → 17/12/08 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
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