Abstract
We demonstrated a Cu/CNT composite material for interconnect application. The electromigration (EM) properties of Cu/CNT composite via and line were investigated using Kelvin and Blech test structures respectively. Our results showed that the EM lifetime of the Cu/CNT composite is more than 5 times longer than Cu.
Original language | English |
---|---|
Title of host publication | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
DOIs | |
Publication status | Published - 1 Dec 2008 |
Externally published | Yes |
Event | 2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008 |
Conference
Conference | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
---|---|
Country/Territory | United States |
City | San Francisco, CA |
Period | 15/12/08 → 17/12/08 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering