Abstract
The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum arc (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying arc current and oxygen partial pressure. In general, a higher partial pressure is needed at higher arc current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 386 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 May 2001 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry