High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique

Y. S. Choong, B. K. Tay, Shu Ping Lau, X. Shi, Y. H. Cheng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum arc (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying arc current and oxygen partial pressure. In general, a higher partial pressure is needed at higher arc current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.
Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalThin Solid Films
Volume386
Issue number1
DOIs
Publication statusPublished - 1 May 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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