High-density switchable skyrmion-like polar nanodomains integrated on silicon

Lu Han, Christopher Addiego, Sergei Prokhorenko, Meiyu Wang, Hanyu Fu, Yousra Nahas, Xingxu Yan, Songhua Cai, Tianqi Wei, Yanhan Fang, Huazhan Liu, Dianxiang Ji, Wei Guo, Zhengbin Gu, Yurong Yang, Peng Wang, Laurent Bellaiche, Yanfeng Chen, Di Wu, Yuefeng NieXiaoqing Pan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

46 Citations (Scopus)


Topological domains in ferroelectrics1–5 have received much attention recently owing to their novel functionalities and potential applications6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
Issue number7899
Publication statusPublished - 3 Mar 2022

ASJC Scopus subject areas

  • General


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