TY - JOUR
T1 - High-density switchable skyrmion-like polar nanodomains integrated on silicon
AU - Han, Lu
AU - Addiego, Christopher
AU - Prokhorenko, Sergei
AU - Wang, Meiyu
AU - Fu, Hanyu
AU - Nahas, Yousra
AU - Yan, Xingxu
AU - Cai, Songhua
AU - Wei, Tianqi
AU - Fang, Yanhan
AU - Liu, Huazhan
AU - Ji, Dianxiang
AU - Guo, Wei
AU - Gu, Zhengbin
AU - Yang, Yurong
AU - Wang, Peng
AU - Bellaiche, Laurent
AU - Chen, Yanfeng
AU - Wu, Di
AU - Nie, Yuefeng
AU - Pan, Xiaoqing
N1 - Funding Information:
We thank L. Chen for discussions, and H. Huyan at UCI for assisting with the TEM experiments. This work was supported by the National Natural Science Foundation of China (grant numbers 11774153, 11861161004, 51772143, 51725203, 51721001, 11874207 and U1932115), the National Key R&D Program of China (grant numbers 2021YFA1400400 and?2020YFA0711504) and the Fundamental Research Funds for the Central Universities (0213-14380198). Y. Nie is supported by High Level Entrepreneurial and Innovative Talents Introduction, Jiangsu Province; C.A., X.Y. and X.P. acknowledge funding from the Department of Energy (DOE)?under grant DE-SC0014430, and the NSF under grant number DMR-2034738. The 4D STEM experiments was conducted using facilities and instrumentation at the UC Irvine Materials Research Institute (IMRI) supported in part by the National Science Foundation through the Materials Research Science and Engineering Center programme (DMR-2011967); Researchers at the University of Arkansas acknowledge DARPA grant number HR0011727183-D18AP00010 (TEE Program), the Vannevar Bush Faculty Fellowship (VBFF) grant number N00014-20-1-2834 from the Department of Defense, and ARO grant number W911NF-21-2-0162 (ETHOS). Computations were made possible thanks to the use of the Arkansas High Performance Computing Center, HPCC resources of Nanjing University and the Arkansas Economic Development Commission.?S.C. acknowledges the support of startup grants from the Department of Applied Physics at?the Hong Kong Polytechnic University, the General Research Fund (grant number?15306021) from the Hong Kong Research Grant Council, the National Natural Science Foundation of China (grant number?12104381) and the open subject of the?National Laboratory of Solid State Microstructures, Nanjing University (M34001).
Funding Information:
We thank L. Chen for discussions, and H. Huyan at UCI for assisting with the TEM experiments. This work was supported by the National Natural Science Foundation of China (grant numbers 11774153, 11861161004, 51772143, 51725203, 51721001, 11874207 and U1932115), the National Key R&D Program of China (grant numbers 2021YFA1400400 and 2020YFA0711504) and the Fundamental Research Funds for the Central Universities (0213-14380198). Y. Nie is supported by High Level Entrepreneurial and Innovative Talents Introduction, Jiangsu Province; C.A., X.Y. and X.P. acknowledge funding from the Department of Energy (DOE) under grant DE-SC0014430, and the NSF under grant number DMR-2034738. The 4D STEM experiments was conducted using facilities and instrumentation at the UC Irvine Materials Research Institute (IMRI) supported in part by the National Science Foundation through the Materials Research Science and Engineering Center programme (DMR-2011967); Researchers at the University of Arkansas acknowledge DARPA grant number HR0011727183-D18AP00010 (TEE Program), the Vannevar Bush Faculty Fellowship (VBFF) grant number N00014-20-1-2834 from the Department of Defense, and ARO grant number W911NF-21-2-0162 (ETHOS). Computations were made possible thanks to the use of the Arkansas High Performance Computing Center, HPCC resources of Nanjing University and the Arkansas Economic Development Commission. S.C. acknowledges the support of startup grants from the Department of Applied Physics at the Hong Kong Polytechnic University, the General Research Fund (grant number 15306021) from the Hong Kong Research Grant Council, the National Natural Science Foundation of China (grant number 12104381) and the open subject of the National Laboratory of Solid State Microstructures, Nanjing University (M34001).
Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Nature Limited.
PY - 2022/3/3
Y1 - 2022/3/3
N2 - Topological domains in ferroelectrics1–5 have received much attention recently owing to their novel functionalities and potential applications6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.
AB - Topological domains in ferroelectrics1–5 have received much attention recently owing to their novel functionalities and potential applications6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.
UR - http://www.scopus.com/inward/record.url?scp=85125612493&partnerID=8YFLogxK
U2 - 10.1038/s41586-021-04338-w
DO - 10.1038/s41586-021-04338-w
M3 - Journal article
C2 - 35236971
AN - SCOPUS:85125612493
SN - 0028-0836
VL - 603
SP - 63
EP - 67
JO - Nature
JF - Nature
IS - 7899
ER -