Keyphrases
Gallium Arsenide
100%
Heteroepitaxial Growth
100%
Mn-doped
100%
III-V Semiconductors
100%
Growth Properties
100%
Multiferroic Properties
100%
Doped BiFeO3
80%
SrTiO3
60%
BiFeO3 Film
40%
Room Temperature
20%
X Ray Diffraction
20%
Pulsed Laser Deposition
20%
(001) Substrate
20%
Epitaxial
20%
Heterostructure
20%
Coercive Field
20%
GaAs(001)
20%
Buffer Layer
20%
Saturated Magnetization
20%
Ferromagnetic Properties
20%
Microscopic Image
20%
Ferroelectric Behavior
20%
Ferroelectric Switching
20%
BiFeO3 Thin Film
20%
GaAs(110)
20%
Electric Field (E-field)
20%
Piezoresponse Force Microscopy
20%
Material Science
III-V Semiconductor
100%
Gallium Arsenide
100%
Multiferroic Material
100%
Bismuth Ferrite
100%
Film
75%
Ferroelectric Material
50%
Heterojunction
25%
Buffer Layer
25%
Pulsed Laser Deposition
25%
X-Ray Diffraction
25%
Thin Films
25%
Physics
Multiferroic Material
100%
Ferroelectric Material
100%
Thin Films
50%
Room Temperature
50%
X Ray Diffraction
50%
Heterojunctions
50%
Electric Field
50%
Pulsed Laser Deposition
50%