Hard carbon nanocomposite films with low stress

B. K. Tay, Y. H. Cheng, X. Z. Ding, Shu Ping Lau, X. Shi, G. F. You, D. Sheeja

Research output: Journal article publicationJournal articleAcademic researchpeer-review

94 Citations (Scopus)

Abstract

Ti- and Al-containing carbon nanocomposite films were deposited by the filtered cathode vacuum arc technique. The influence of Ti and Al content in the target on the surface morphology, structure, internal stress, hardness and Young's modulus of the deposited films were studied. The surface of all carbon nanocomposite films was atomically smooth. The incorporation of metal atoms in the films led to an increase in surface roughness and ID/IGratio. The RMS and ID/IGratio of ta-C:Al films was higher than that of ta-C:Ti films deposited from a target with the same metal content. The incorporation of both Ti and Al atoms in ta-C films resulted in a decrease in internal stress, hardness and Young's modulus. The effect of Al on the internal stress, hardness and Young's modulus of carbon nanocomposite films was more pronounced than that of Ti. For ta-C:Ti and ta-C:Al films deposited from a target with a metal content of 10 at.%, the internal stress was reduced to 4.29 and 1.94 GPa, respectively, whereas the hardness remained at a high level (24 and 18 GPa, respectively). Raman spectra clearly indicate that the Ti atoms in ta-C:Ti films exist as a TiC phase, which contributes to the higher internal stress, hardness, and Young's modulus of ta-C:Ti films.
Original languageEnglish
Pages (from-to)1082-1087
Number of pages6
JournalDiamond and Related Materials
Volume10
Issue number3-7
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes

Keywords

  • Al films
  • Filteredf carhodic vacuum arc
  • Hardness
  • Internal stress
  • Ta-C
  • ta-C
  • Ta-C films
  • Ti films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • General Physics and Astronomy
  • Materials Chemistry
  • Electrical and Electronic Engineering

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