Halide doping effects on transparent conducting oxides formed by aerosol assisted chemical vapour deposition

Nuruzzaman Noor, Ivan P. Parkin

Research output: Journal article publicationJournal articleAcademic researchpeer-review

18 Citations (Scopus)


We report on the effect of halide doping on the Aerosol-assisted Chemical Vapour Deposition of tin oxide. Specifically, the importance of precursor interactions is highlighted. A halide exchange reaction involving part substitution of the tin precursor is believed to occur in the solvent; the complex acting as a marker for improved films with improved transparent- conducting properties. Precursor mixtures of butyltin trichloride and potassium halide (X = F, Cl, Br, I) in propan-2-ol were deposited at a substrate temperature of 450 C using air carrier gas. Hall Effect results indicate that fluorine gave the best performing n-type transparent conducting thin films that exhibited high optical transparency (> 80% at 550 nm) and resistivity values of 4.9 × 10- 4Ω.cm, with charge carrier density and carrier mobility values of 8.85 × 1020cm- 3and 15 cm3/V.s respectively. Such parameters yield high figures of merit.
Original languageEnglish
Pages (from-to)26-30
Number of pages5
JournalThin Solid Films
Publication statusPublished - 1 Apr 2013
Externally publishedYes


  • Aerosol
  • Chemical vapour deposition
  • Fluorine-doped tin oxide
  • Halide exchange
  • Thin film
  • Tin oxide
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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