Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

X. Y. Chen; J. Wang; K. H. Wong; Chee Leung Mak; G. X. Chen; J. M. Liu; M. Wang; Z. G. Liu

doi:10.1007/s00339-004-3068-1

Growth of orientation-controlled Pb(Mg,Nb)O₃-PbTiO₃ thin films on Si(100) by using oriented MgO films as buffers

X. Y. Chen
, J. Wang
, K. H. Wong
, Chee Leung Mak
, G. X. Chen
, J. M. Liu
, M. Wang
, Z. G. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

10 Citations (Scopus)

Abstract

Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

Original language	English
Pages (from-to)	1145-1149
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	81
Issue number	6
DOIs	https://doi.org/10.1007/s00339-004-3068-1
Publication status	Published - 1 Nov 2005

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1007/s00339-004-3068-1

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title = "Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers",

abstract = "Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.",

author = "Chen, \{X. Y.\} and J. Wang and Wong, \{K. H.\} and Mak, \{Chee Leung\} and Chen, \{G. X.\} and Liu, \{J. M.\} and M. Wang and Liu, \{Z. G.\}",

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doi = "10.1007/s00339-004-3068-1",

language = "English",

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TY - JOUR

T1 - Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

AU - Chen, X. Y.

AU - Wang, J.

AU - Wong, K. H.

AU - Mak, Chee Leung

AU - Chen, G. X.

AU - Liu, J. M.

AU - Wang, M.

AU - Liu, Z. G.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

AB - Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

UR - https://www.scopus.com/pages/publications/24144432082

U2 - 10.1007/s00339-004-3068-1

DO - 10.1007/s00339-004-3068-1

M3 - Journal article

SN - 0947-8396

VL - 81

SP - 1145

EP - 1149

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 6

ER -

Growth of orientation-controlled Pb(Mg,Nb)O₃-PbTiO₃ thin films on Si(100) by using oriented MgO films as buffers

Abstract

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