Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

X. Y. Chen, J. Wang, K. H. Wong, Chee Leung Mak, G. X. Chen, J. M. Liu, M. Wang, Z. G. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)

Abstract

Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.
Original languageEnglish
Pages (from-to)1145-1149
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number6
DOIs
Publication statusPublished - 1 Nov 2005

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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