Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

X. Y. Chen; J. Wang; K. H. Wong; Chee Leung Mak; G. X. Chen; J. M. Liu; M. Wang; Z. G. Liu

doi:10.1007/s00339-004-3068-1

Growth of orientation-controlled Pb(Mg,Nb)O₃-PbTiO₃ thin films on Si(100) by using oriented MgO films as buffers

X. Y. Chen, J. Wang, K. H. Wong, Chee Leung Mak, G. X. Chen, J. M. Liu, M. Wang, Z. G. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

10 Citations (Scopus)

Abstract

Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

Original language	English
Pages (from-to)	1145-1149
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	81
Issue number	6
DOIs	https://doi.org/10.1007/s00339-004-3068-1
Publication status	Published - 1 Nov 2005

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1007/s00339-004-3068-1

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title = "Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers",

abstract = "Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.",

author = "Chen, {X. Y.} and J. Wang and Wong, {K. H.} and Mak, {Chee Leung} and Chen, {G. X.} and Liu, {J. M.} and M. Wang and Liu, {Z. G.}",

year = "2005",

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doi = "10.1007/s00339-004-3068-1",

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T1 - Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

AU - Chen, X. Y.

AU - Wang, J.

AU - Wong, K. H.

AU - Mak, Chee Leung

AU - Chen, G. X.

AU - Liu, J. M.

AU - Wang, M.

AU - Liu, Z. G.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

AB - Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO 3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

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U2 - 10.1007/s00339-004-3068-1

DO - 10.1007/s00339-004-3068-1

M3 - Journal article

SN - 0947-8396

VL - 81

SP - 1145

EP - 1149

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 6

ER -

Growth of orientation-controlled Pb(Mg,Nb)O₃-PbTiO₃ thin films on Si(100) by using oriented MgO films as buffers

Abstract

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