Growth of highly oriented of Pb(Zr_x, Ti_1-x)O₃film on porous silicon

Thin Pb(Zr0.52Ti0.48)O3(PZT) films on porous silicon (PS) substrates were fabricated by a pulsed laser ablation (PLA) technique. X-Ray diffraction studies show the presence of c-axis orientation only. The full width at half maximum (FWHM) of the rocking curve of the diffraction at 2θ 44.22° (002) is less than 0.7°, showing high (001)-orientation. The film is ferroelectric and exhibits a symmetric hysteresis loop. The remnant polarization and the coercive field were 4.2 μc/cm2and 38 kV/cm, respectively. The results indicate that using PS as a substrate could solve well the problems not only of the growth of oriented PZT film, but also of preventing diffusion between a ferroelectric and Si substrate during device fabrication without any intermediate layer.