Growth of highly oriented of Pb(Zrx, Ti1-x)O3film on porous silicon

Q. Chen, W. B. Wu, Chee Leung Mak, K. H. Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

Thin Pb(Zr0.52Ti0.48)O3(PZT) films on porous silicon (PS) substrates were fabricated by a pulsed laser ablation (PLA) technique. X-Ray diffraction studies show the presence of c-axis orientation only. The full width at half maximum (FWHM) of the rocking curve of the diffraction at 2θ 44.22° (002) is less than 0.7°, showing high (001)-orientation. The film is ferroelectric and exhibits a symmetric hysteresis loop. The remnant polarization and the coercive field were 4.2 μc/cm2and 38 kV/cm, respectively. The results indicate that using PS as a substrate could solve well the problems not only of the growth of oriented PZT film, but also of preventing diffusion between a ferroelectric and Si substrate during device fabrication without any intermediate layer.
Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalThin Solid Films
Volume397
Issue number1-2
DOIs
Publication statusPublished - 1 Nov 2001

Keywords

  • Ferroelectric properties
  • Interface
  • Titanium oxide
  • X-Ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this