Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

W. Wang; K. K. Leung; W. K. Fong; S. F. Wang; Y. Y. Hui; Shu Ping Lau; C. Surya

doi:10.1109/ICSICT.2012.6467666

Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, Shu Ping Lau, C. Surya

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467666
Publication status	Published - 1 Dec 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

ASJC Scopus subject areas

Human-Computer Interaction
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ICSICT.2012.6467666

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Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467666 https://doi.org/10.1109/ICSICT.2012.6467666

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title = "Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications",

abstract = "SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.",

author = "W. Wang and Leung, {K. K.} and Fong, {W. K.} and Wang, {S. F.} and Hui, {Y. Y.} and Lau, {Shu Ping} and C. Surya",

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month = dec,

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doi = "10.1109/ICSICT.2012.6467666",

language = "English",

isbn = "9781467324724",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Wang, W, Leung, KK, Fong, WK, Wang, SF, Hui, YY, Lau, SP & Surya, C 2012, Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467666, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467666

Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. / Wang, W.; Leung, K. K.; Fong, W. K. et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467666.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Wang, W.

AU - Leung, K. K.

AU - Fong, W. K.

AU - Wang, S. F.

AU - Hui, Y. Y.

AU - Lau, Shu Ping

AU - Surya, C.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.

AB - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.

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T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

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Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

Abstract

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ASJC Scopus subject areas

UN SDGs

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