Growth of epitaxial quality SnS thin films on graphene

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, Shu Ping Lau, C. Surya

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.
Original languageEnglish
Title of host publication2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs
Publication statusPublished - 1 Dec 2012
Event2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand
Duration: 3 Dec 20125 Dec 2012

Conference

Conference2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
Country/TerritoryThailand
CityBangkok
Period3/12/125/12/12

Keywords

  • molecular beam epitaxy
  • photovoltaics
  • SnS
  • van der Waals Epitaxy

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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