Growth of epitaxial quality SnS thin films on graphene

W. Wang; K. K. Leung; W. K. Fong; S. F. Wang; Y. Y. Hui; Shu Ping Lau; C. Surya

doi:10.1109/EDSSC.2012.6482879

Growth of epitaxial quality SnS thin films on graphene

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, Shu Ping Lau, C. Surya

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.

Original language	English
Title of host publication	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs	https://doi.org/10.1109/EDSSC.2012.6482879
Publication status	Published - 1 Dec 2012
Event	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand Duration: 3 Dec 2012 → 5 Dec 2012

Conference

Conference	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
Country/Territory	Thailand
City	Bangkok
Period	3/12/12 → 5/12/12

Keywords

molecular beam epitaxy
photovoltaics
SnS
van der Waals Epitaxy

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2012.6482879

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title = "Growth of epitaxial quality SnS thin films on graphene",

abstract = "SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.",

keywords = "molecular beam epitaxy, photovoltaics, SnS, van der Waals Epitaxy",

author = "W. Wang and Leung, {K. K.} and Fong, {W. K.} and Wang, {S. F.} and Hui, {Y. Y.} and Lau, {Shu Ping} and C. Surya",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2012.6482879",

language = "English",

isbn = "9781467356961",

booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",

}

Wang, W, Leung, KK, Fong, WK, Wang, SF, Hui, YY, Lau, SP & Surya, C 2012, Growth of epitaxial quality SnS thin films on graphene. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482879, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 3/12/12. https://doi.org/10.1109/EDSSC.2012.6482879

TY - GEN

T1 - Growth of epitaxial quality SnS thin films on graphene

AU - Wang, W.

AU - Leung, K. K.

AU - Fong, W. K.

AU - Wang, S. F.

AU - Hui, Y. Y.

AU - Lau, Shu Ping

AU - Surya, C.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.

AB - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.

KW - molecular beam epitaxy

KW - photovoltaics

KW - SnS

KW - van der Waals Epitaxy

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U2 - 10.1109/EDSSC.2012.6482879

DO - 10.1109/EDSSC.2012.6482879

M3 - Conference article published in proceeding or book

SN - 9781467356961

BT - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

T2 - 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012

Y2 - 3 December 2012 through 5 December 2012

ER -

Growth of epitaxial quality SnS thin films on graphene

Abstract

Conference

Keywords

ASJC Scopus subject areas

More information

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