Growth of carbon nanotube bundles on microscratched surfaces

Lei Huang; Shu Ping Lau; Z. Sun; Kenneth B.K. Teo; B. K. Tay

doi:10.1142/S0219581X0500353X

Growth of carbon nanotube bundles on microscratched surfaces

Lei Huang, Shu Ping Lau, Z. Sun, Kenneth B.K. Teo, B. K. Tay

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.

Original language	English
Pages (from-to)	419-422
Number of pages	4
Journal	International Journal of Nanoscience
Volume	4
Issue number	4
DOIs	https://doi.org/10.1142/S0219581X0500353X
Publication status	Published - 1 Aug 2005
Externally published	Yes

Keywords

Aligned carbon nanotubes
Carbon nanotubes
Chemical vapor deposition
Reactive ion etching

ASJC Scopus subject areas

Biotechnology
Bioengineering
General Materials Science
Condensed Matter Physics
Computer Science Applications
Electrical and Electronic Engineering

More information

10.1142/S0219581X0500353X

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AU - Lau, Shu Ping

AU - Sun, Z.

AU - Teo, Kenneth B.K.

AU - Tay, B. K.

PY - 2005/8/1

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N2 - In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.

AB - In this paper, we demonstrated a roughness dependent chemical vapor deposition (CVD) process to selectively grow aligned carbon nanotube bundles on silicon substrates with microscratches. Our results show that the aligned nanotubes of uniform length (around 2 μm) and diameter (20-30 nm) are assembled to nanotube bundles and in-plane vertically aligned with the microscratches. The microscratch-selective nanotube growth offers a promising approach for the fabrication of 3-D nanotube architectures in a single CVD process.

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KW - Chemical vapor deposition

KW - Reactive ion etching

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JO - International Journal of Nanoscience

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Growth of carbon nanotube bundles on microscratched surfaces

Abstract

Keywords

ASJC Scopus subject areas

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