Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

P. F. Lee; Jiyan Dai; K. H. Wong; H. L.W. Chan; C. L. Choy

doi:10.1063/1.1554764

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

P. F. Lee, Jiyan Dai, K. H. Wong, H. L.W. Chan, C. L. Choy

Research output: Journal article publication › Journal article › Academic research › peer-review

61 Citations (Scopus)

Abstract

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films were investigated. Ultrathin amorphous Hf-aluminate (Hf-Al-O) films were deposited on p-type (100) Si substrates by pulsed-laser deposition. The films were further examined by transmission electron microscopy. The analysis showed that Hf-Al-O films were stable under rapid thermal annealing at temperatures upto at least 1000°C.

Original language	English
Pages (from-to)	3665-3667
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1554764
Publication status	Published - 15 Mar 2003

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1554764

http://hdl.handle.net/10397/548

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@article{92e9c52cefcc45238c9e1291bc7a68b2,

title = "Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 {\AA}",

abstract = "Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films were investigated. Ultrathin amorphous Hf-aluminate (Hf-Al-O) films were deposited on p-type (100) Si substrates by pulsed-laser deposition. The films were further examined by transmission electron microscopy. The analysis showed that Hf-Al-O films were stable under rapid thermal annealing at temperatures upto at least 1000°C.",

author = "Lee, \{P. F.\} and Jiyan Dai and Wong, \{K. H.\} and Chan, \{H. L.W.\} and Choy, \{C. L.\}",

year = "2003",

month = mar,

day = "15",

doi = "10.1063/1.1554764",

language = "English",

volume = "93",

pages = "3665--3667",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

AU - Lee, P. F.

AU - Dai, Jiyan

AU - Wong, K. H.

AU - Chan, H. L.W.

AU - Choy, C. L.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films were investigated. Ultrathin amorphous Hf-aluminate (Hf-Al-O) films were deposited on p-type (100) Si substrates by pulsed-laser deposition. The films were further examined by transmission electron microscopy. The analysis showed that Hf-Al-O films were stable under rapid thermal annealing at temperatures upto at least 1000°C.

AB - Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films were investigated. Ultrathin amorphous Hf-aluminate (Hf-Al-O) films were deposited on p-type (100) Si substrates by pulsed-laser deposition. The films were further examined by transmission electron microscopy. The analysis showed that Hf-Al-O films were stable under rapid thermal annealing at temperatures upto at least 1000°C.

UR - https://www.scopus.com/pages/publications/0037444935

U2 - 10.1063/1.1554764

DO - 10.1063/1.1554764

M3 - Journal article

SN - 0021-8979

VL - 93

SP - 3665

EP - 3667

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Abstract

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