Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films were investigated. Ultrathin amorphous Hf-aluminate (Hf-Al-O) films were deposited on p-type (100) Si substrates by pulsed-laser deposition. The films were further examined by transmission electron microscopy. The analysis showed that Hf-Al-O films were stable under rapid thermal annealing at temperatures upto at least 1000°C.
ASJC Scopus subject areas
- Physics and Astronomy(all)