Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

P. F. Lee, Jiyan Dai, K. H. Wong, H. L.W. Chan, C. L. Choy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

52 Citations (Scopus)

Abstract

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films were investigated. Ultrathin amorphous Hf-aluminate (Hf-Al-O) films were deposited on p-type (100) Si substrates by pulsed-laser deposition. The films were further examined by transmission electron microscopy. The analysis showed that Hf-Al-O films were stable under rapid thermal annealing at temperatures upto at least 1000°C.
Original languageEnglish
Pages (from-to)3665-3667
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
Publication statusPublished - 15 Mar 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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