Growth ambient on memory characteristics in Au nanoclusters embedded in high-k dielectric as novel non-volatile memory

K. C. Chan; P. F. Lee; J. Y. Dai

doi:10.1016/j.mee.2008.09.031

Growth ambient on memory characteristics in Au nanoclusters embedded in high-k dielectric as novel non-volatile memory

K. C. Chan, P. F. Lee, J. Y. Dai

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013cm-2has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.

Original language	English
Pages (from-to)	2385-2387
Number of pages	3
Journal	Microelectronic Engineering
Volume	85
Issue number	12
DOIs	https://doi.org/10.1016/j.mee.2008.09.031
Publication status	Published - 1 Dec 2008

Keywords

Au
Flash memory
Floating gate memory
Metal nanoclusters

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2008.09.031

Cite this

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abstract = "In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013cm-2has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.",

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AU - Lee, P. F.

AU - Dai, J. Y.

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Y1 - 2008/12/1

N2 - In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013cm-2has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.

AB - In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013cm-2has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.

KW - Au

KW - Flash memory

KW - Floating gate memory

KW - Metal nanoclusters

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JF - Microelectronic Engineering

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IS - 12

ER -

Growth ambient on memory characteristics in Au nanoclusters embedded in high-k dielectric as novel non-volatile memory

Abstract

Keywords

ASJC Scopus subject areas

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