Abstract
In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013cm-2has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.
Original language | English |
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Pages (from-to) | 2385-2387 |
Number of pages | 3 |
Journal | Microelectronic Engineering |
Volume | 85 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1 Dec 2008 |
Keywords
- Au
- Flash memory
- Floating gate memory
- Metal nanoclusters
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering