Growth ambient on memory characteristics in Au nanoclusters embedded in high-k dielectric as novel non-volatile memory

K. C. Chan, P. F. Lee, J. Y. Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

In this work, we report on the findings of the effects of different ambient on memory characteristics of a floating gate memory structure containing HfAlO control gate, self-organized Au nanoclusters (NCs), and a HfAlO tunnel layer deposited by the pulsed-laser deposition. The optimized fabrication environment has been found and stored charge density up to 1013cm-2has been achieved. As the sizes of the Au NCs are smaller than 4 nm, they may be potentially used in multilayer-structured multi-bit memory cell.
Original languageEnglish
Pages (from-to)2385-2387
Number of pages3
JournalMicroelectronic Engineering
Volume85
Issue number12
DOIs
Publication statusPublished - 1 Dec 2008

Keywords

  • Au
  • Flash memory
  • Floating gate memory
  • Metal nanoclusters

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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