Abstract
Graphitic interfacial layer is used to wet the surface of carbon nanotube and dramatically lower the contact resistance of metal to metallic single-wall carbon nanotube (m-CNT). Using Ni-catalyzed graphitization of amorphous carbon (a-C), the average resistance of metal/m-CNT is reduced by 7X compared to the same contact without the graphitic layer. Small-signal conductance measurements from 77K to 300K reveal the effective contact improvement.
Original language | English |
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Title of host publication | 2010 IEEE International Electron Devices Meeting, IEDM 2010 |
DOIs | |
Publication status | Published - 1 Dec 2010 |
Event | 2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010 |
Conference
Conference | 2010 IEEE International Electron Devices Meeting, IEDM 2010 |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 6/12/10 → 8/12/10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry