Abstract
Uncooled infrared (IR) photodetection has attracted increasing research interest due to its important applications in civil and military fields. Recently, platinum diselenide (PtSe2), a newly discovered group-10 two-dimensional (2D) noble metal dichalcogenide (NMD) member, has emerged as an attractive candidate for highly sensitive IR photodetection due to its layer-dependent bandgap transition from semiconductor to semimetal, wide optical absorption, and high carrier mobility. Here, we demonstrate the successful assembly of PtSe2/pyramid Si mixed-dimensional van der Waals (vdW) Schottky junction with a graphene transparent electrode. Due to the novel vertical device structure with a graphene top contact, the photodetector achieves an appealing device performance, including an ultrabroadband response up to $10.6~\mu \text{m}$ , a high responsivity of 0.528 A/W, a large specific detectivity of 1012 Jones, and a fast response time of $8.2~\mu \text{s}$ at zero bias voltage. More importantly, these findings have enabled the realization of an excellent room-temperature long-wave IR (LWIR) imaging capability and its utilization as an optical receiver in optical IR communication. Our work demonstrates a reliable approach to the construction of a high-performance Schottky junction device for room-temperature broadband IR photodetection.
Original language | English |
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Pages (from-to) | 6212-6216 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 69 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2022 |
Keywords
- Broadband infrared (IR)
- platinum diselenide
- room temperature
- van der Waals (vdW) Schottky junction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering