Graphene/gallium arsenide-based Schottky junction solar cells

Wenjing Jie, Fengang Zheng, Jianhua Hao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

80 Citations (Scopus)


Chemical-vapor-deposited single- and bi-layer graphene sheets have been transferred onto n-type GaAs substrates. The rectifying characteristics and photovoltaic behaviors of graphene/GaAs junctions have been systematically investigated. The graphene sheets can be combined with the underlying n-type GaAs substrates to form Schottky junctions. For bilayer graphene, the Schottky junction shows photovoltaic effects with the open-circuit voltage of 0.65 V and the short-circuit current density of 10.03 mA/cm2, yielding a power conversion efficiency of 1.95%, which are superior to single-layer one. Such performance parameters are comparable to those of other pristine graphene/semiconductor junction-based devices.
Original languageEnglish
Article number233111
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2 Dec 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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