TY - JOUR
T1 - Grain Size Modulation and Interfacial Engineering of CH3NH3PbBr3 Emitter Films through Incorporation of Tetraethylammonium Bromide
AU - Jamaludin, Nur Fadilah
AU - Yantara, Natalia
AU - Ng, Yan Fong
AU - Li, Mingjie
AU - Goh, Teck Wee
AU - Thirumal, Krishnamoorthy
AU - Sum, Tze Chien
AU - Mathews, Nripan
AU - Soci, Cesare
AU - Mhaisalkar, Subodh
N1 - Funding Information:
We would like to extend our gratitude to Dr. Tom Baikie for the valuable discussion on the obtained XRD data. This research was supported by the National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP Award No. NRF-CRP14-2014-03) and through the Singapore-Berkeley Research Initiative for Sustainable Energy (SinBeRISE) CREATE Program.
Publisher Copyright:
© 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/5/7
Y1 - 2018/5/7
N2 - Metal halide perovskites have demonstrated breakthrough performances as absorber and emitter materials for photovoltaic and display applications respectively. However, despite the low manufacturing cost associated with solution-based processing, the propensity for defect formation with this technique has led to an increasing need for defect passivation. Here, we present an inexpensive and facile method to remedy surface defects through a postdeposition treatment process using branched alkylammonium cation species. The simultaneous realignment of interfacial energy levels upon incorporation of tetraethylammonium bromide onto the surface of CH3NH3PbBr3 films contributes favorably toward the enhancement in overall light-emitting diode characteristics, achieving maximum luminance, current efficiency, and external quantum efficiency values of 11 000 cd m−2, 0.68 cd A−1, and 0.16 %, respectively.
AB - Metal halide perovskites have demonstrated breakthrough performances as absorber and emitter materials for photovoltaic and display applications respectively. However, despite the low manufacturing cost associated with solution-based processing, the propensity for defect formation with this technique has led to an increasing need for defect passivation. Here, we present an inexpensive and facile method to remedy surface defects through a postdeposition treatment process using branched alkylammonium cation species. The simultaneous realignment of interfacial energy levels upon incorporation of tetraethylammonium bromide onto the surface of CH3NH3PbBr3 films contributes favorably toward the enhancement in overall light-emitting diode characteristics, achieving maximum luminance, current efficiency, and external quantum efficiency values of 11 000 cd m−2, 0.68 cd A−1, and 0.16 %, respectively.
KW - CHNHPbBr
KW - hybrid halide perovskites
KW - light-emitting diodes
KW - mixed dimensional systems
KW - postdeposition treatment
UR - http://www.scopus.com/inward/record.url?scp=85042541323&partnerID=8YFLogxK
U2 - 10.1002/cphc.201701380
DO - 10.1002/cphc.201701380
M3 - Journal article
C2 - 29297203
AN - SCOPUS:85042541323
SN - 1439-4235
VL - 19
SP - 1075
EP - 1080
JO - ChemPhysChem
JF - ChemPhysChem
IS - 9
ER -