TY - JOUR
T1 - Giant Electric Energy Density in Epitaxial Lead-Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics
AU - Peng, Biaolin
AU - Zhang, Qi
AU - Li, Xing
AU - Sun, Tieyu
AU - Fan, Huiqing
AU - Ke, Shanming
AU - Ye, Mao
AU - Wang, Yu
AU - Lu, Wei
AU - Niu, Hanben
AU - Scott, James F.
AU - Zeng, Xierong
AU - Huang, Haitao
PY - 2015/1/1
Y1 - 2015/1/1
N2 - KGaA, Weinheim Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm−3, three times the highest value of lead-based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3(BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
AB - KGaA, Weinheim Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm−3, three times the highest value of lead-based systems and five times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3(BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology.
KW - antiferroelectric
KW - energy storage
KW - morphotropic phase boundary
KW - pulsed laser deposition
KW - relaxor
UR - http://www.scopus.com/inward/record.url?scp=84977079211&partnerID=8YFLogxK
U2 - 10.1002/aelm.201500052
DO - 10.1002/aelm.201500052
M3 - Journal article
SN - 2199-160X
VL - 1
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 5
M1 - 1500052
ER -