Abstract
This letter proposes a gradient-based end-of-life (EOL) criterion for power semiconductor modules under power cycling tests. It significantly improves the consistency in determining the cycle-to-failure of testing samples compared with the widely used absolute-value-based EOL criterion, such as the percentage change of on-state saturation voltage of insulated-gate bipolar transistors (IGBTs). Both analytical analyses and experimental results are presented to explain and verify the feasibility and superior consistency of the proposed one.
| Original language | English |
|---|---|
| Pages (from-to) | 2927-2931 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 39 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Mar 2024 |
Keywords
- Degradation
- end-of-life (EOL) criterion
- power cycling test
- power semiconductor modules
- reliability
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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