Generation and annealing kinetics of current induced metastable defects in amorphous silicon alloys

Keyphrases

• Band Gap 100%
• Amorphous Silicon 100%
• Silicon Alloys 100%
• Induced Current 100%
• Annealing Kinetics 100%
• Metastable Defects 100%
• Diode 50%
• A-Si 50%
• Weak Bonding 50%
• Silicon-rich 50%
• Rapid Change 50%
• Si1-xCx 50%
• Defect Production 50%
• Alloying Metals 50%
• Defect Annealing 50%
• Current Stressing 50%
• Thin Metal Films 50%
• Escape Frequency 50%
• Generation Rate 50%
• Annealing Rate 50%
• Hydrogenated Amorphous Silicon 50%
• Defect Generation 50%
• Metal-semiconductor-metal 50%
• Bonding Configuration 50%
• Defect Formation 50%
• Follow Current 50%
• Thin-film Diode 50%

Material Science

• Annealing 100%
• Silicon Alloys 100%
• Amorphous Silicon 100%
• Silicon 50%
• Thin Films 50%