Abstract
The electrical transport characteristics of multiwall CNx/carbon nanotube intramolecular junctions were studied. The junctions could be used as diodes. We found that the rectification resulted from p-n junctions, not from metal-semiconductor junctions. The gate effect was very weak when the diodes were reverse biased. At forward bias, however, some of the p-n diodes could be n-type transistors. Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CNxpart and the electrode. Using p-n diodes, a bipolar transistor with nanoscale components was built, whose behavior was very similar to that of a conventional planar bipolar transistor.
Original language | English |
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Article number | 395205 |
Journal | Nanotechnology |
Volume | 18 |
Issue number | 39 |
DOIs | |
Publication status | Published - 26 Sep 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering