Gate voltage dependent characteristics of p-n diodes and bipolar transistors based on multiwall CNx/carbon nanotube intramolecular junctions

W. J. Zhang, Q. F. Zhang, Yang Chai, X. Shen, J. L. Wu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)

Abstract

The electrical transport characteristics of multiwall CNx/carbon nanotube intramolecular junctions were studied. The junctions could be used as diodes. We found that the rectification resulted from p-n junctions, not from metal-semiconductor junctions. The gate effect was very weak when the diodes were reverse biased. At forward bias, however, some of the p-n diodes could be n-type transistors. Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CNxpart and the electrode. Using p-n diodes, a bipolar transistor with nanoscale components was built, whose behavior was very similar to that of a conventional planar bipolar transistor.
Original languageEnglish
Article number395205
JournalNanotechnology
Volume18
Issue number39
DOIs
Publication statusPublished - 26 Sep 2007
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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