Gate oxide induced switch-on undershoot current observed in thin-film transistors

Feng Yan; Piero Migliorato; Yi Hong; V. Rana; R. Ishihara; Y. Hiroshima; D. Abe; S. Inoue; T. Shimoda

doi:10.1063/1.1954896

Gate oxide induced switch-on undershoot current observed in thin-film transistors

Feng Yan, Piero Migliorato, Yi Hong, V. Rana, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda

Research output: Journal article publication › Journal article › Academic research › peer-review

14 Citations (Scopus)

Abstract

The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide. Assuming there are some mobile ions in the gate oxide, we find the drift kinetics of the ions is quite similar to the mobile protons in SiO2, as reported in the literature.

Original language	English
Article number	253504
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	25
DOIs	https://doi.org/10.1063/1.1954896
Publication status	Published - 13 Sept 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1954896

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abstract = "The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide. Assuming there are some mobile ions in the gate oxide, we find the drift kinetics of the ions is quite similar to the mobile protons in SiO2, as reported in the literature.",

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AU - Migliorato, Piero

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AU - Rana, V.

AU - Ishihara, R.

AU - Hiroshima, Y.

AU - Abe, D.

AU - Inoue, S.

AU - Shimoda, T.

PY - 2005/9/13

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AB - The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide. Assuming there are some mobile ions in the gate oxide, we find the drift kinetics of the ions is quite similar to the mobile protons in SiO2, as reported in the literature.

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Gate oxide induced switch-on undershoot current observed in thin-film transistors

Abstract

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