Gate oxide induced switch-on undershoot current observed in thin-film transistors

Feng Yan, Piero Migliorato, Yi Hong, V. Rana, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)

Abstract

The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide. Assuming there are some mobile ions in the gate oxide, we find the drift kinetics of the ions is quite similar to the mobile protons in SiO2, as reported in the literature.
Original languageEnglish
Article number253504
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number25
DOIs
Publication statusPublished - 13 Sep 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this