Gate-controlled transport properties in dilute magnetic semiconductor (Zn, Mn)O thin films

H. F. Wong, S. M. Ng, Y. K. Liu, K. K. Lam, K. H. Chan, W. F. Cheng, D. Von Nordheim, C. L. Mak, B. Ploss, C. W. Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

Ionic liquid (IL) gating of functional oxides has drawn significant attention, since it can provide reversible changes in carrier concentration (1014 cm-2) at the interface, permitting the manipulation of electrical and magnetic properties of oxide films with low voltages. In this paper, we demonstrated the electric-field manipulation of transport properties in the dilute magnetic semiconductor of Zn0.98Mn0.02O (MZO), using an electric-double-layer transistor geometry through the IL electrolyte gating. The MZO layer exhibited reversible control of resistance up to 33% at 230 K. Moreover, magnetoresistance (MR) measurements revealed the influence of applied gate voltage (Vg) on the magnetotransport behavior, which exhibited a positive MR in the low-field region and a negative MR in high magnetic field (up to 9 T). An increase in low-field positive MR (<1 T) upon switching Vg from-2 to 2 V implied an enhanced ferromagnetic state of MZO due to an increased electron carrier concentration. The results demonstrated that a controllable carrier concentration by electric-field effect played an important role in the manipulation of magnetism in MZO.

Original languageEnglish
Article number8418348
JournalIEEE Transactions on Magnetics
Volume54
Issue number11
DOIs
Publication statusPublished - Nov 2018

Keywords

  • Dilute magnetic semiconductor (DMS) and magnetism
  • Electric effect
  • Mn-doped ZnO (MZO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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