Ionic liquid (IL) gating of functional oxides has drawn significant attention, since it can provide reversible changes in carrier concentration (1014 cm-2) at the interface, permitting the manipulation of electrical and magnetic properties of oxide films with low voltages. In this paper, we demonstrated the electric-field manipulation of transport properties in the dilute magnetic semiconductor of Zn0.98Mn0.02O (MZO), using an electric-double-layer transistor geometry through the IL electrolyte gating. The MZO layer exhibited reversible control of resistance up to 33% at 230 K. Moreover, magnetoresistance (MR) measurements revealed the influence of applied gate voltage (Vg) on the magnetotransport behavior, which exhibited a positive MR in the low-field region and a negative MR in high magnetic field (up to 9 T). An increase in low-field positive MR (<1 T) upon switching Vg from-2 to 2 V implied an enhanced ferromagnetic state of MZO due to an increased electron carrier concentration. The results demonstrated that a controllable carrier concentration by electric-field effect played an important role in the manipulation of magnetism in MZO.
- Dilute magnetic semiconductor (DMS) and magnetism
- Electric effect
- Mn-doped ZnO (MZO)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering