GaN/MgO/ZnO heterojunction light-emitting diodes

Xinyi Chen, Alan M C Ng, Aleksandra B. Djurišić, Wai Kin Chan, P. W K Fong, H. F. Lui, C. Surya, C. C W Cheng, Wai Ming Kwok

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


Light-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. ZnO thin film deposited by electron-beam deposition and ZnO nanorods grown by electrodeposition were used as n-type materials. Devices with and without ~ 10 nm thick MgO interlayer between p-GaN and ZnO were prepared. The existence of MgO interlayer significantly affected LED performance compared to LEDs without MgO interlayer. In the photoluminescence measurements, p-GaN/MgO/ZnO nanorods exhibited stimulated emission under pulsed optical excitation, while no stimulated emission was observed in the absence of MgO. The effect of MgO interlayer on ZnO growth, optical and electrical properties, as well as the emission spectra of LEDs is discussed in detail.
Original languageEnglish
Pages (from-to)303-307
Number of pages5
JournalThin Solid Films
Publication statusPublished - 1 Jan 2013


  • Electrodeposition
  • Electroluminescence
  • Keywords
  • Light-emitting diodes
  • Photoluminescence
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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