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GaAs metal-oxide-semiconductor capacitor with Nd-based high-k oxynitrides as gate dielectric and passivation layer
- L. N. Liu
- , H. W. Choi
- , J. P. Xu
- , W. M. Tang
- , P. T. Lai
Research output: Journal article publication › Journal article › Academic research › peer-review
10
Citations
(Scopus)