GaAs metal-oxide-semiconductor capacitor with Nd-based high-k oxynitrides as gate dielectric and passivation layer

L. N. Liu, H. W. Choi, J. P. Xu, W. M. Tang, P. T. Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

GaAsmetal-oxide-semiconductor capacitors with NdTaON as gate dielectric and NdAlON, NdON or AlON as interfacial passivation layer (IPL) are fabricated, and their interfacial and electrical properties are compared with their counterpart without IPL. Experimental results show that owing to the suppressed hygroscopicity of NdON by Al incorporation, best improvements in electrical properties and reliability are achieved for the sample with NdAlON IPL (low interface-state density (8 × 1011 cm-2/eV), small flatband voltage (0.72 V), negligible hysteresis (43 mV), small frequency dispersion, and low gate leakage current density (2.56 × 10-6 A/cm2 at Vfb + 1 V). These should be attributed to suppressed growth of unstable Ga and As oxides on the GaAs surface and reduced in-diffusion of elements from the gate dielectric to the GaAs surface by the NdAlON IPL during gate-dielectric annealing.

Original languageEnglish
Pages (from-to)72-78
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

Keywords

  • GaAs metal-oxide-semiconductor (MOS)
  • Interface states density
  • Interfacial passivation layer (IPL)
  • Nd-based high-k

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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