Abstract
Developing multi-resonance thermally activated fluorescence (MR-TADF) emitters with both fast reverse intersystem crossing (RISC) rate and narrow emission bandwidth still remains a formidable challenge. Herein, a design strategy of fused MR skeleton containing heavy chalcogen (sulfur or selenium) for high-performance MR-TADF molecules is developed. Impressively, Se-embedded emitter (DSeBN) shows extremely narrow full width at half maximum (FWHM) value of 16 nm and ultrafast RISC rate constant up to 2.0 × 106 s−1. The organic light-emitting diode (OLED) based on this emitter exhibits excellent performance parameters with extremely narrow FWHM of 17 nm and high external quantum efficiency (EQE) of 35.31%. Significantly, much suppressed efficiency roll-off is achieved, in which the EQE still stayed at 32.47% and 25.05% at the luminance of 100 and 1000 cd m−2, respectively. These results represent the state-of-the-art device performance in terms of efficiency and FWHM, shedding new light on the development of practical MR-TADF emitters.
Original language | English |
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Article number | 2400794 |
Journal | Advanced Optical Materials |
Volume | 12 |
Issue number | 25 |
DOIs | |
Publication status | Published - 27 Jul 2024 |
Keywords
- heavy-atom effect
- multi-resonance thermally activated delayed fluorescence
- narrowband emission
- organic light-emitting diodes
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics