Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Z. G. Song; Jiyan Dai; S. Ansari; C. K. Oh; S. Redkar

doi:10.1109/IPFA.2002.1025619

Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Z. G. Song
, Jiyan Dai
, S. Ansari
, C. K. Oh
, S. Redkar

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

21 Citations (Scopus)

Abstract

To keep the evidence of the root cause, focused ion beam (FIB) cross-section and transmission electron microscope (TEM) analysis are the effective techniques for further analysis when a unit is de-processed to contact-level and front-end layers are still intact. To make sure that FIB cross-section hits a defect, it is very important to localize the defect precisely in advance. Since the contacts are the only access to the front-end layers of a semiconductor device, it should be possible to utilize them as probes to pinpoint the defects related to the front-end processes. In this paper, The technique of contact-level passive voltage contrast was employed to identify the contacts with abnormal contrast and thus localize the front-end processing defects.

Original language	English
Title of host publication	Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002
Publisher	IEEE
Pages	97-100
Number of pages	4
Volume	2002-January
ISBN (Electronic)	0780374169
DOIs	https://doi.org/10.1109/IPFA.2002.1025619
Publication status	Published - 1 Jan 2002
Event	9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002 - Singapore, Singapore Duration: 12 Jul 2002 → …

Conference

Conference	9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002
Country/Territory	Singapore
City	Singapore
Period	12/07/02 → …

Keywords

Cause effect analysis
Electron beams
Electron emission
Failure analysis
Ion beams
Scanning electron microscopy
Semiconductor devices
Substrates
Surfaces
Voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering

More information

10.1109/IPFA.2002.1025619

Cite this

Song, Z. G., Dai, J., Ansari, S., Oh, C. K., & Redkar, S. (2002). Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis. In Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002 (Vol. 2002-January, pp. 97-100). Article 1025619 IEEE. https://doi.org/10.1109/IPFA.2002.1025619

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title = "Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis",

abstract = "To keep the evidence of the root cause, focused ion beam (FIB) cross-section and transmission electron microscope (TEM) analysis are the effective techniques for further analysis when a unit is de-processed to contact-level and front-end layers are still intact. To make sure that FIB cross-section hits a defect, it is very important to localize the defect precisely in advance. Since the contacts are the only access to the front-end layers of a semiconductor device, it should be possible to utilize them as probes to pinpoint the defects related to the front-end processes. In this paper, The technique of contact-level passive voltage contrast was employed to identify the contacts with abnormal contrast and thus localize the front-end processing defects.",

keywords = "Cause effect analysis, Electron beams, Electron emission, Failure analysis, Ion beams, Scanning electron microscopy, Semiconductor devices, Substrates, Surfaces, Voltage",

author = "Song, \{Z. G.\} and Jiyan Dai and S. Ansari and Oh, \{C. K.\} and S. Redkar",

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booktitle = "Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002",

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Song, ZG, Dai, J, Ansari, S, Oh, CK & Redkar, S 2002, Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis. in Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002. vol. 2002-January, 1025619, IEEE, pp. 97-100, 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002, Singapore, Singapore, 12/07/02. https://doi.org/10.1109/IPFA.2002.1025619

Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis. / Song, Z. G.; Dai, Jiyan; Ansari, S. et al.
Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002. Vol. 2002-January IEEE, 2002. p. 97-100 1025619.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Redkar, S.

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N2 - To keep the evidence of the root cause, focused ion beam (FIB) cross-section and transmission electron microscope (TEM) analysis are the effective techniques for further analysis when a unit is de-processed to contact-level and front-end layers are still intact. To make sure that FIB cross-section hits a defect, it is very important to localize the defect precisely in advance. Since the contacts are the only access to the front-end layers of a semiconductor device, it should be possible to utilize them as probes to pinpoint the defects related to the front-end processes. In this paper, The technique of contact-level passive voltage contrast was employed to identify the contacts with abnormal contrast and thus localize the front-end processing defects.

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KW - Cause effect analysis

KW - Electron beams

KW - Electron emission

KW - Failure analysis

KW - Ion beams

KW - Scanning electron microscopy

KW - Semiconductor devices

KW - Substrates

KW - Surfaces

KW - Voltage

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BT - Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002

PB - IEEE

T2 - 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002

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ER -

Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Abstract

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Keywords

ASJC Scopus subject areas

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