Front-end processing defect localization by contact-level passive voltage contrast technique and root cause analysis

Z. G. Song, Jiyan Dai, S. Ansari, C. K. Oh, S. Redkar

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

15 Citations (Scopus)

Abstract

To keep the evidence of the root cause, focused ion beam (FIB) cross-section and transmission electron microscope (TEM) analysis are the effective techniques for further analysis when a unit is de-processed to contact-level and front-end layers are still intact. To make sure that FIB cross-section hits a defect, it is very important to localize the defect precisely in advance. Since the contacts are the only access to the front-end layers of a semiconductor device, it should be possible to utilize them as probes to pinpoint the defects related to the front-end processes. In this paper, The technique of contact-level passive voltage contrast was employed to identify the contacts with abnormal contrast and thus localize the front-end processing defects.
Original languageEnglish
Title of host publicationProceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002
PublisherIEEE
Pages97-100
Number of pages4
Volume2002-January
ISBN (Electronic)0780374169
DOIs
Publication statusPublished - 1 Jan 2002
Event9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002 - Singapore, Singapore
Duration: 12 Jul 2002 → …

Conference

Conference9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002
CountrySingapore
CitySingapore
Period12/07/02 → …

Keywords

  • Cause effect analysis
  • Electron beams
  • Electron emission
  • Failure analysis
  • Ion beams
  • Scanning electron microscopy
  • Semiconductor devices
  • Substrates
  • Surfaces
  • Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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