Free-excitonic gain in ZnO/MgxZn1-xO strained quantum wells

A. P. Abiyasa, Siu Fung Yu, W. J. Fan, Shu Ping Lau

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Free-exciton with exciton phonon interaction of wurtzite ZnO/Mg xZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO/MgxZn1-xO QWs with the consideration of biaxial strain is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation constant of ZnO/MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively.
Original languageEnglish
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages55-56
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore
Duration: 11 Sep 200614 Sep 2006

Conference

Conference2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
CountrySingapore
CityNanyang
Period11/09/0614/09/06

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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