Free-excitonic gain in ZnO/MgxZn1-xO strained quantum wells

A. P. Abiyasa; Siu Fung Yu; W. J. Fan; Shu Ping Lau

doi:10.1109/NUSOD.2006.306738

Free-excitonic gain in ZnO/Mg_xZn_1-xO strained quantum wells

A. P. Abiyasa, Siu Fung Yu, W. J. Fan, Shu Ping Lau

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Free-exciton with exciton phonon interaction of wurtzite ZnO/Mg xZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO/MgxZn1-xO QWs with the consideration of biaxial strain is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation constant of ZnO/MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively.

Original language	English
Title of host publication	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages	55-56
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2006.306738
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore Duration: 11 Sept 2006 → 14 Sept 2006

Conference

Conference	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Country/Territory	Singapore
City	Nanyang
Period	11/09/06 → 14/09/06

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

More information

10.1109/NUSOD.2006.306738

Cite this

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title = "Free-excitonic gain in ZnO/MgxZn1-xO strained quantum wells",

abstract = "Free-exciton with exciton phonon interaction of wurtzite ZnO/Mg xZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO/MgxZn1-xO QWs with the consideration of biaxial strain is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation constant of ZnO/MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively.",

author = "Abiyasa, {A. P.} and Yu, {Siu Fung} and Fan, {W. J.} and Lau, {Shu Ping}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/NUSOD.2006.306738",

language = "English",

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pages = "55--56",

booktitle = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06",

note = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 ; Conference date: 11-09-2006 Through 14-09-2006",

}

Abiyasa, AP, Yu, SF, Fan, WJ & Lau, SP 2006, Free-excitonic gain in ZnO/Mg_xZn_1-xO strained quantum wells. in 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06., 4098778, pp. 55-56, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, Nanyang, Singapore, 11/09/06. https://doi.org/10.1109/NUSOD.2006.306738

Free-excitonic gain in ZnO/Mg_xZn_1-xO strained quantum wells. / Abiyasa, A. P.; Yu, Siu Fung; Fan, W. J. et al.
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 55-56 4098778.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AB - Free-exciton with exciton phonon interaction of wurtzite ZnO/Mg xZn1-xO quantum wells (QWs) is studied theoretically. The valence band structure of ZnO/MgxZn1-xO QWs with the consideration of biaxial strain is calculated based on a 6×6 Hamiltonian. From the available experimental data, the band offset ratio and conduction band deformation constant of ZnO/MgxZn1-xO QWs are found to be 60/40 and -6.8 eV, respectively.

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