TY - GEN
T1 - Fracture mechanics analysis on Smart-Cut® technology: Effects of stiffening wafer and defect interaction
AU - Gu, Bin
AU - Liu, Hong Yuan
AU - Mai, Yiu Wing
AU - Feng, Xi Qiao
AU - Yu, Shou Wen
PY - 2008
Y1 - 2008
N2 - In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI) wafers of very high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indicate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIFs. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.
AB - In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI) wafers of very high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indicate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIFs. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.
KW - Crack growth
KW - Fracture mechanics
KW - Silicon-on-insulator wafer
KW - Smart-Cut technology
KW - Stress intensity factor
UR - http://www.scopus.com/inward/record.url?scp=45749088964&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/amr.33-37.67
DO - 10.4028/www.scientific.net/amr.33-37.67
M3 - Conference article published in proceeding or book
AN - SCOPUS:45749088964
SN - 0878493999
SN - 9780878493999
T3 - Advanced Materials Research
SP - 67
EP - 72
BT - Advances in Fracture and Materials Behavior - Selected, peer reviewed papers of the Seventh International Conference on Fracture and Strength of Solids (FEOFS2007)
PB - Trans Tech Publications
T2 - 7th International Conference on Fracture and Strength of Solids, FEOFS 2007
Y2 - 27 August 2007 through 29 August 2007
ER -